1

Rectifier Device Data

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features epitaxial construction with

oxide passivation and metal overlap contact. Ideally suited for use as rectifiers

in low–voltage, high–frequency inverters, free wheeling diodes, and polarity

protection diodes.

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C

Max. for 10 Seconds, 1/16

″ from case

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the

part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: B150, B160

MAXIMUM RATINGS

Rating

Symbol

MBR150

MBR160

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

60

Volts

RMS Reverse Voltage

VR(RMS)

35

42

Volts

Average Rectified Forward Current (2)

(VR(equiv) v 0.2 VR(dc), TL = 90°C, R

θJA = 80°C/W, P.C. Board Mounting,

see Note 3, TA = 55°C)

IO

1

Amp

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C)

IFSM

25 (for one cycle)

Amps

Operating and Storage Junction Temperature Range (Reverse Voltage applied)

TJ, Tstg

*65 to +150

°C

Peak Operating Junction Temperature (Forward Current applied)

TJ(pk)

150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

80

°C/W

Characteristic

Symbol

Max

Unit

Maximum Instantaneous Forward Voltage (1)

(iF = 0.1 A)

(iF = 1 A)

(iF = 3 A)

vF

0.550

0.750

1.000

Volt

Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)

(TL = 25°C)

(TL = 100°C)

iR

0.5

5

mA

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%.

(2) Lead Temperature reference is cathode lead 1/32

″ from case.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MBR150/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MBR150

MBR160

SCHOTTKY BARRIER

RECTIFIERS

1 AMPERE

50, 60 VOLTS

CASE 59–04

PLASTIC

MBR160 is a

Motorola Preferred Device

Rev 1