BD202 datasheet(2/3 Pages) COMSET

No. de pieza	BD202

Descripción Electrónicos	SILCON EPITAXIAL-BASE POWER TRANSISTORS

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Fabricante Electrónico	COMSET [Comset Semiconductor]

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2 / 3 page

NPN BD201 – BD203

PNP BD202 – BD204

COMSET SEMICONDUCTORS

3

/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

BD201

ICEO

Collector Cutoff Current

VCE=30 V, IB=0V

BD203

-

0.2

mA

BD201

ICBO

Collector Cutoff Current

VCB=40 V, IE=0V, Tj=150°C

BD203

-

1

mA

BD201

IEBO

Emitter Cutoff Current

VBE=5.0 V, IC=0

BD203

-

0.5

mA

BD201

VBE

Base Emitter Voltage (1)

IC=3 A, VCE=2.0 V

BD203

-

1.5

V

BD201

VCEK

Knee Voltage (1)

IC=3 A, IB= value for which

IC=3.3 A at VCE=2.0 V

BD203

-

1

-

V

IC=3 A, VCE=2.0 V

BD201

30

-

hFE

DC Current Gain (1)

IC=2 A, VCE=20 V

BD203

30

-

BD201

IC=3 A, IB=0.3 A

BD203

-

1

BD201

VCE(SAT)

Collector-Emitter saturation

Voltage (1)

IC=6 A, IB=0.6 A

BD203

-

1.5

BD201

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=6 A, IB=0.6 A

BD203

-

2

V

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

BD201

fhfe

Cut-off frequency

IC=0.3 A, VCE=3.0 V

BD203

25

-

KHz

BD201

fT

Transition frequency

IC=0.3 A, VCE=3.0 V

f= 1MHz

BD203

7

-

MHz

BD201

Is/b

Forward bias second

breakdown collector current

VCE=40 V,tp= 0.1 s

Tamb= 25 °C

BD203

1.5

-

A

BD201

hFE1/hFE2

DC current gain ration of

matched complementary pairs

IC=1 A, VCE=2.0 V

BD203

2.5

-

BD201

ton

Turn-on time

BD203

-

1

BD201

Toff

Turn-off time

ICon=2 A

IBon = -IBoff =0.2 A

BD203

-

4

µs

(1) Pulse conditions : tp < 300

µs, δ =2%

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