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| 1PS76SB70 |
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NXP |
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6 page
BAS70_1PS7XSB70_SER_9 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 09 — 13 January 2010 6 of 20 NXP Semiconductors BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes 6. Thermal characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Soldering point at pins 2, 3, 5 and 6. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air SOT23 - - 500 K/W SOT143B - - 500 K/W SOT363 (BAS70-07S) - - 416 K/W SOT666 (BAS70VV) [2] - - 700 K/W SOT666 (BAS70-07V) [2] - - 416 K/W SOD123F [2] - - 330 K/W SOD323 - - 450 K/W SOD523 [2] - - 450 K/W SOD882 [2] - - 500 K/W SOT323 - - 625 K/W Rth(j-sp) thermal resistance from junction to solder point SOT363 (BAS70XY) [3] - - 260 K/W Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF =1mA - - 410 mV IF =10mA - - 750 mV IF =15mA - - 1 V IR reverse current VR =50V - - 100 nA VR =70V - - 10 μA Cd diode capacitance VR =0V; f=1MHz - - 2 pF |
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