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6 page 
BAS40_1PSXXSB4X_SER_8 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 08 — 13 January 2010 6 of 21 NXP Semiconductors BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values [1] Tj =25 °C prior to surge. Table 5. Marking codes Type number Marking code[1] Type number Marking code[1] 1PS70SB40 6*3 1PS75SB45 45 1PS76SB40 S4 BAS40-05 45* 1PS79SB40 T BAS40-05W 65* BAS40 43* 1PS70SB46 6*6 BAS40H AJ BAS40-06 46* BAS40L S6 BAS40-06W 66* BAS40W 63* BAS40-07 47* 1PS70SB44 6*4 BAS40-07V 67 BAS40-04 44* BAS40-05V 65 BAS40-04W 64* 1PS88SB48 8*5 1PS70SB45 6*5 BAS40XY 40* Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR reverse voltage - 40 V IF forward current - 120 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 - 120 mA IFSM non-repetitive peak forward current tp ≤ 10 ms [1] -200 mA Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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