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ES6U42 Datasheet(PDF) 5 Page - Rohm |
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ES6U42 Datasheet(HTML) 5 Page - Rohm |
5 / 6 page ES6U42 Data Sheet 5/5 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.01 - Rev.A Measurement circuit Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 10% 50% 50% Pulse Width VGS VDS ton toff tr td(on) tf td(off) 10% 90% 10% 90% Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) RG VDS D.U.T. ID RL VDD FIg.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. |
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