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ES6U42 Datasheet(PDF) 5 Page - Rohm

No. de pieza ES6U42
Descripción Electrónicos  2.5V Drive PchSBD MOSFET
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Fabricante Electrónico  ROHM [Rohm]
Página de inicio  http://www.rohm.com
Logo ROHM - Rohm

ES6U42 Datasheet(HTML) 5 Page - Rohm

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ES6U42
Data Sheet
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.01 - Rev.A
Measurement circuit
Fig.1-1 Switching Time Measurement Circuit
VGS
RG
VDS
D.U.T.
ID
RL
VDD
Fig.1-2 Switching Waveforms
90%
10%
50%
50%
Pulse Width
VGS
VDS
ton
toff
tr
td(on)
tf
td(off)
10%
90%
10%
90%
Fig.2-1 Gate Charge Measurement Circuit
VGS
IG(Const.)
RG
VDS
D.U.T.
ID
RL
VDD
FIg.2-2 Gate Charge Waveform
VG
VGS
Charge
Qg
Qgs
Qgd
Notice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.


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