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IRF6798MPBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF6798MPBF
Descripción Electrónicos  HEXFET Power MOSFET plus Schottky Diode
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6798MPBF Datasheet(HTML) 1 Page - International Rectifier

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1
12/10/09
IRF6798MPbF
IRF6798MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 30A.
Notes:
DirectFET
™ ISOMETRIC
MX
SQ
SX
ST
MQ
MX
MT
MP
l RoHs Compliant Containing No Lead and Bromide

l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
PD - 97433B
Description
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6798MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6798MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
ID = 37A
TJ = 25°C
TJ = 125°C
0
25
50
75
100
125
150
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
ID= 30A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
50nC
16nC
6.8nC
64nC
38nC
1.8V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
30
Max.
30
197
300
±20
25
37
220
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V


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