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IRF6798MTRPbF Datasheet(PDF) 4 Page - International Rectifier

No. de pieza IRF6798MTRPbF
Descripción Electrónicos  HEXFET Power MOSFET plus Schottky Diode
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6798MTRPbF Datasheet(HTML) 4 Page - International Rectifier

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IRF6798MTRPbF
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Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
1
2
3
4
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
ID = 37A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
25
50
75
100 125 150 175 200
ID, Drain Current (A)
0
2
4
6
8
10
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
VGS
TOP
10V
5.0V
4.3V
3.5V
3.3V
3.0V
2.8V
BOTTOM
2.5V
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP
10V
5.0V
4.3V
3.5V
3.3V
3.0V
2.8V
BOTTOM
2.5V


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