www.SiliconStandard.com

3 of 7

10/07/2004 Rev.1.01

SS6383(G)

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNIT

1.6

2.5/1.8

Input Voltage (DDR1/2)

power on and off sequences

3.0

3.3

6

V

Output Voltage

V

Output Voltage Offset

-20

20

mV

10

25

Load Regulation (DDR1/2)

10

25

mV

Quiescent Current

8

30

µA

3

10

mA

1

µA

Current Limit

2.1

3

4.5

A

THERMAL PROTECTION

Thermal Shutdown

Temperature

3.3V

125

150

°C

Thermal Shutdown

Hysteresis

Guaranteed by design

30

°C

SHUTDOWN SPECIFICATIONS

0.8

Shutdown Threshold

0.2

V

temperature range are assured by design, characterization and correlation with Statistical Quality

Controls (SQC).

Note 2

Note 3

: Load regulation is measured at constant junction temperature, using pulse testing with a low duty cycle.

Note 4

: Current limit is measured using a low duty cycle.

Note 5

(Note 3)

(Note 4)