2PA1774SM datasheet(5/8 Pages) NXP

No. de pieza	2PA1774SM

Descripción Electrónicos	PNP general purpose transistor

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Fabricante Electrónico	NXP [NXP Semiconductors]

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5 / 8 page

2004 Feb 19

5

NXP Semiconductors

Product data sheet

PNP general purpose transistor

2PA1774M series

handbook, halfpage

MDB665

IC (mA)

−10−1

−1

−10

−102

−103

VCEsat

(mV)

−102

−10

(1)

(3)

(2)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MDB666

VBEsat

(mV)

−400

−200

−600

−1000

−800

−1200

−10−1

−1

−10

−102

IC (mA)

(1)

(3)

(2)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

IC

(A)

0

−6

−2

−8

−10

VCE (V)

−4

0

−0.2

−0.12

−0.16

−0.04

−0.08

MDB667

(1)

(3)

(4)

(5)

(7)

(8)

(9)

(10)

(6)

(2)

Fig.6

Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −2.7 mA.

(2) IB = −2.43 mA.

(3) IB = −2.16 mA.

(4) IB = −1.89 mA.

(5) IB = −1.62 mA.

(6) IB = −1.35 mA.

(7) IB = −1.08 mA.

(8) IB = −0.81 mA.

(9) IB = −0.54 mA.

(10) IB = −0.27 mA.

MDB668

IC (mA)

−10−1

−1

−10

−102

−103

RCEsat

(

Ω)

103

102

10

1

(2)

(3)

(1)

Fig.7

Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

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