SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 – JANUARY 1996

FEATURES

* 1 Amp continuous current

COMPLEMENTARY TYPE –

FMMT455

PARTMARKING DETAIL –

555

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-160

V

Collector-Emitter Voltage

-150

V

Emitter-Base Voltage

-5

V

Peak Pulse Current

-2

A

Continuous Collector Current

-1

A

Base Current

-200

mA

500

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN.

MAX

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

-160

V

Collector-Emitter

Breakdown Voltage

-150

V

Emitter-Base

Breakdown Voltage

-5

V

Collector Cut-Off Current

-0.1

-10

µ

A

µ

A

Emitter Cut-Off Current

-0.1

µ

A

Collector-Emitter

Saturation Voltage

-0.3

V

Base-Emitter

Saturation Voltage

-1

V

Base-Emitter

Turn-on Voltage

-1

V

Static Forward Current

Transfer Ratio

50

50

300

Transition Frequency

100

MHz

f=100MHz

Output Capacitance

10

pF

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FMMT555

C

B

E

SOT23

3 - 131

3 - 132

FMMT555

TYPICAL CHARACTERISTICS

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

Single Pulse Test at Tamb=25°C

20

40

60

80

100

0

-1

-0.2

-0.4

-0.6

-0.8

Switching Speeds

Collector Current (Amps)

-0.0001

-0.001

-0.01

-0.1

-0.0001

-0.001

1

-0.01

-0.1

3

2

1

4

5

-0.1

-1

0

-0.01

ZTX5 5 4 /5 5 -2

ts

tf

td

tr

ts

µs

tr

ns

300

200

100

400

500

0

tf

ns

600

400

200

800

1000

0

td

ns

100

50

0

-0.6

-0.0001

-0.001

-1

-0.01

-0.1

-0.8

-1.0

-1.2

-1.4

-0.6

-1

-0.0001

-0.001

-0.01

-0.1

-1.0

-1.2

-1.4

-0.8

0

1

0.1

Safe Operating Area

10V

100V

1s

DC

100ms

10ms

1ms

1V

0.01

0.001

0.1V

10

1000V