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74LVC1G14GW Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza 74LVC1G14GW
Descripción Electrónicos  Single Schmitt-trigger inverter
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Fabricante Electrónico  NXP [NXP Semiconductors]
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74LVC1G14GW Datasheet(HTML) 6 Page - NXP Semiconductors

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74LVC1G14_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 18 July 2007
6 of 16
NXP Semiconductors
74LVC1G14
Single Schmitt-trigger inverter
[1]
All typical values are measured at Tamb = 25 °C
12. Dynamic characteristics
[1]
Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V.
VT−
negative-going
threshold voltage
see Figure 9 and Figure 10
VCC = 1.8 V
0.46
0.6
0.75
0.46
0.78
V
VCC = 2.3 V
0.65
0.8
0.96
0.65
0.99
V
VCC = 3.0 V
0.88
1.0
1.24
0.88
1.27
V
VCC = 4.5 V
1.32
1.5
1.84
1.32
1.87
V
VCC = 5.5 V
1.58
1.8
2.24
1.58
2.27
V
VH
hysteresis voltage
(VT+ − VT−); see Figure 9,
Figure 10 and Figure 11
VCC = 1.8 V
0.26
0.4
0.51
0.19
0.51
V
VCC = 2.3 V
0.28
0.4
0.57
0.22
0.57
V
VCC = 3.0 V
0.31
0.5
0.64
0.25
0.64
V
VCC = 4.5 V
0.40
0.6
0.77
0.34
0.77
V
VCC = 5.5 V
0.47
0.6
0.88
0.41
0.88
V
Table 8.
Transfer characteristics …continued
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 8.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 8.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
A to Y; see Figure 7
[2]
VCC = 1.65 V to 1.95 V
1.0
4.1
11.0
1.0
14.0
ns
VCC = 2.3 V to 2.7 V
0.7
2.8
6.5
0.7
8.5
ns
VCC = 2.7 V
0.7
3.2
6.5
0.7
8.5
ns
VCC = 3.0 V to 3.6 V
0.7
3.0
5.5
0.7
7.0
ns
VCC = 4.5 V to 5.5 V
0.7
2.2
5.0
0.7
6.5
ns
CPD
power dissipation
capacitance
VCC = 3.3 V; VI = GND to VCC
[3]
-
15.4
-
-
-
pF


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