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BAS31 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS31 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2003 Mar 20 3 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 110 V VR continuous reverse voltage − 90 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 250 mA double diode loaded; see Fig.2; note 1 − 150 mA IFRM repetitive peak forward current − 600 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 10 A t = 100 µs − 4 A t = 1 s − 0.75 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW IRRM repetitive peak reverse current − 600 mA ERRM repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C − 5 mJ Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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