2003 Dec 12

5

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS116

150

200

50

0

mlb754

100

10

1

(nA)

(1)

(2)

(1) Maximum values.

(2) Typical values.

Fig.5

Reverse current as a function of junction

temperature.

Fig.6

Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

010

20

15

5

2

0

1

MBG526

VR (V)

Cd

(pF)

handbook, full pagewidth

t rr

(1)

I F

t

output signal

t r

t

t p

10%

90%

VR

input signal

V = V

I x R

RF

S

R = 50

S

Ω

IF

D.U.T.

R = 50

i

Ω

SAMPLING

OSCILLOSCOPE

MGA881

Fig.7 Reverse recovery time test circuit and waveforms.