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BC556 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BC556
Descripción Electrónicos  PNP general purpose transistors
Download  8 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

BC556 Datasheet(HTML) 3 Page - NXP Semiconductors

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2004 Oct 11
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC556; BC557
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Notes
1.
VBEsat decreases by about −1.7 mV/K with increasing temperature.
2.
VBE decreases by about −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −30 V; IE = 0 A
−1
−15
nA
VCB = −30 V; IE = 0 A; Tj = 150 °C
−4
μA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 V
−100 nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V;
see Figs 2, 3 and 4
BC556
125
475
BC557
125
800
BC556A
125
250
BC556B; BC557B
220
475
BC557C
420
800
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−60
−300 mV
IC = −100 mA; IB = −5 mA
−180 −650 mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA; note 1
−750 −
mV
IC = −100 mA; IB = −5 mA; note 1
−930 −
mV
VBE
base-emitter voltage
VCE = −5 V; IC = −2 mA; note 2
−600 −650 −750 mV
VCE = −5 V; IC = −10 mA; note 2
−820 mV
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
3
pF
Ce
emitter capacitance
VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz
10
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA; f = 100 MHz 100
MHz
F
noise figure
VCE = −5 V; IC = −200 μA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
2
10
dB


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