BC857AM datasheet(6/10 Pages) NXP

No. de pieza	BC857AM

Descripción Electrónicos	PNP general purpose transistors

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Fabricante Electrónico	NXP [NXP Semiconductors]

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6 / 10 page

2004 Mar 10

6

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC857M series

GRAPHICAL INFORMATION BC857BM

handbook, halfpage

0

1000

200

400

600

800

MLE192

−10−2

−10−1

(1)

−1

IC (mA)

hFE

−10

−102

−103

(2)

(3)

Fig.6 DC current gain; typical values.

VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE193

−10−2

−10−1

(1)

−1

IC (mA)

VBE

(mV)

−10

−102

−103

(3)

(2)

Fig.7

Base-emitter voltage as a function of

collector current; typical values.

VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE194

−10−1

−1

−10

IC (mA)

VCEsat

(mV)

−102

−103

(2)

(3)

(1)

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE195

−1

−10−1

IC (mA)

VBEsat

(mV)

−10

−102

−103

(1)

(3)

(2)

Fig.9

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

Número de pieza similar - BC857AM

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	BC857AM	84Kb / 13P	45 V, 100 mA NPN general-purpose transistors Rev. 8-20 August 2012
NXP Semiconductors	BC857AM	83Kb / 10P	PNP general purpose transistors 2004 Mar 10
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	BC857AM	362Kb / 11P	PNP general purpose transistors 2004 Mar 10
	BC857AM	362Kb / 11P	PNP general purpose transistors 2004 Mar 10

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BC857AM Datasheet(PDF) 6 Page - NXP Semiconductors

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