1.

Product profile

1.1 General description

The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss

and high isolation capabilities of this MOSFET provide excellent RF switching functions.

Integrated diodes between gate and source and between gate and drain protect against

excessive input voltage surges. Drain and source are interchangeable.

1.2 Features

1.3 Applications

1.4 Quick reference data

BF1107

N-channel single gate MOSFET

Rev. 04 — 9 January 2007

Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

f = 50 MHz to 860 MHz

-

-

2.5

dB

-

-

3.5

dB

off-state isolation

f = 50 MHz to 860 MHz

30

--dB

30

--dB

drain-source on-state

resistance

-

12

20

Ω

gate-source pinch-off

voltage

−3

−4.5 V