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STPSC806 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STPSC806
Descripción Electrónicos  600 V power Schottky silicon carbide diode
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STPSC806 Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
STPSC806
4/7
Doc ID 16286 Rev 1
Figure 7.
Total capacitive charges versus dIF/dt (typical values)
Figure 5.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 6.
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
th(j-c)/Rth(j-c)
Single pulse
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
I
FSM(A)
Tc=25 °C
Tc=125 °C
tp(s)
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
350
400
450
500
Q
C(nC)
I
F=8A
V
R=400 V
Tj=150 °C
dIF/dt(A/µs)


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