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Si8221DC-A-IS Datasheet(PDF) 7 Page - Silicon Laboratories |
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Si8221DC-A-IS Datasheet(HTML) 7 Page - Silicon Laboratories |
7 / 28 page Si8220/21 Rev. 0.22 7 3. Regulatory Information Table 2. Regulatory Information* CSA The Si82xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873. VDE The Si82xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. UL The Si82xx is certified under UL1577 component recognition program. For more details, see File E257455. *Note: Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec. Regulatory Certifications apply to 3.75 kVRMS rated devices which are production tested to 4.5 kVRMS for 1 sec. Regulatory Certifications apply to 5.0 kVRMS rated devices which are production tested to 6.0 kVRMS for 1 sec. For more information, see "9.Ordering Guide" on page 21. Table 3. Insulation and Safety-Related Specifications Parameter Symbol Test Condition Value Unit WB SOIC-16 NB SOIC-8 Nominal Air Gap (Clearance)1 L(IO1) 8.0 min 4.9 min mm Nominal External Tracking (Creepage)1 L(IO2) 8.0 min 4.01 min mm Minimum Internal Gap (Internal Clearance) 0.014 0.014 mm Tracking Resistance (Comparative Tracking Index) CTI DIN IEC 60112/VDE 0303 Part 1 >175 >175 V Resistance (Input-Output)2 RIO 1012 1012 Capacitance (Input-Output)2 CIO f = 1 MHz 2.0 1.0 pF Input Capacitance3 CI 4.0 4.0 pF Notes: 1. The values in this table correspond to the nominal creepage and clearance values as detailed in "12.Package Outline: 16-Pin Wide Body SOIC" on page 25, "10.Package Outline: 8-Pin Narrow Body SOIC" on page 23. VDE certifies the clearance and creepage limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB SOIC-8 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB SOIC-16 package. 2. To determine resistance and capacitance, the Si82xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8) are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second terminal. The parameters are then measured between these two terminals. 3. Measured from input pin to ground. |
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