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TPC8021-H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPC8021-H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8021-H 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 5.5 A ⎯ 18.5 25 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5.5 A ⎯ 13.5 17 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 5.5 A 10 19 ⎯ S Input capacitance Ciss ⎯ 640 ⎯ Reverse transfer capacitance Crss ⎯ 75 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 300 ⎯ pF Rise time tr ⎯ 4 ⎯ Turn-on time ton ⎯ 8 ⎯ Fall time tf ⎯ 4 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 µs ⎯ 18 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 11 A ⎯ 11 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 11 A ⎯ 6.3 ⎯ Gate-source charge 1 Qgs1 ⎯ 2.2 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 2.6 ⎯ Gate switch charge QSW VDD ∼− 24 V, VGS = 10 V, ID = 11A ⎯ 3.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 44 A Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 5.5 A VOUT |
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