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TPC8021-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza TPC8021-H
Descripción Electrónicos  High-Efficiency DC/DC Converter Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8021-H Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPC8021-H
2006-11-16
3
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.1
2.3
V
VGS = 4.5 V, ID = 5.5 A
18.5
25
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 5.5 A
13.5
17
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5.5 A
10
19
S
Input capacitance
Ciss
640
Reverse transfer capacitance
Crss
75
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
300
pF
Rise time
tr
4
Turn-on time
ton
8
Fall time
tf
4
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 µs
18
ns
VDD ∼− 24 V, VGS = 10 V, ID = 11 A
11
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ∼− 24 V, VGS = 5 V, ID = 11 A
6.3
Gate-source charge 1
Qgs1
2.2
Gate-drain (“Miller”) charge
Qgd
2.6
Gate switch charge
QSW
VDD ∼− 24 V, VGS = 10 V, ID = 11A
3.6
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
44
A
Forward voltage (diode)
VDSF
IDR = 15 A, VGS = 0 V
−1.2
V
VDD ∼− 15 V
0 V
VGS
10 V
ID = 5.5 A
VOUT


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