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TPCA8010-H Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCA8010-H Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCA8010-H 2009-12-21 4 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID 4 6 8 10 0 4 6 8 10 2 02 8 12 16 20 0 2 3 4 5 1 04 0 1 2 3 4 5 2 3 4 5 0 1 4 8 0 8 12 16 20 4 0 2 10 6 Common source VDS = 10 V Pulse test Ta = −55°C 100 25 Common source Ta = 25°C Pulse test ID = 5.5 A 1.4 2.7 Common source VDS = 10 V Pulse test Ta = −55°C 25 100 0.1 100 1 10 0.1 1 100 10 100 0.1 100 1000 110 10000 10 Common source Ta = 25°C VGS = 10 V Pulse test VGS = 4 V 4.5 6 10 4.8 5 8 5.5 5.7 Common source Ta = 25°C Pulse test 5.2 VGS = 4 V Common source Ta = 25°C Pulse test 6 8 10 5.2 4.8 5 4.5 4.3 5.5 |
Número de pieza similar - TPCA8010-H_09 |
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Descripción similar - TPCA8010-H_09 |
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