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TPC8017-H Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TPC8017-H Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPC8017-H 2006-11-16 6 rth − tw Drain-source voltage VDS (V) Safe operating area 1 0.001 10 100 1000 0.01 0.1 1 10 100 0.1 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 (2) (1) 0.1 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1 10 100 1000 0.1 10 1 VDSS max 0.1 100 ID max (Pulse) * t=1ms * VDSS max 10ms * Single - pulse Pulse width tw (s) ※ Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. |
Número de pieza similar - TPC8017-H_06 |
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Descripción similar - TPC8017-H_06 |
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