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TPCA8045-H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8045-H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8045-H 2009-04-22 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1.0 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 23 A ⎯ 2.9 4.1 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 23 A ⎯ 2.4 3.6 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 23 A 68 136 ⎯ S Input capacitance Ciss ⎯ 5800 7540 Reverse transfer capacitance Crss ⎯ 305 445 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 950 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 1.5 Ω Rise time tr ⎯ 4.6 ⎯ Turn-on time ton ⎯ 15 ⎯ Fall time tf ⎯ 11 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 67 ⎯ ns VDD ≈ 32 V, VGS = 10 V, ID = 46 A ⎯ 90 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 32 V, VGS = 5 V, ID = 46 A ⎯ 47 ⎯ Gate-source charge 1 Qgs1 ⎯ 16 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 15 ⎯ Gate switch charge QSW VDD ≈ 32 V, VGS = 10 V, ID = 46 A ⎯ 23 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 138 A Forward voltage (diode) VDSF IDR = 46 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 20 V 0 V VGS 10 V ID = 23 A VOUT |
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