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TPCS8008-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza TPCS8008-H
Descripción Electrónicos  High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications
Download  7 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8008-H Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPCS8008-H
2009-12-09
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V (BR) DSX
ID = 10 mA, VGS = −5 V
250
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 0.8 A
0.48
0.58
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.8 A
0.8
1.8
S
Input capacitance
Ciss
600
pF
Reverse transfer capacitance
Crss
20
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
220
pF
Rise time
tr
35
Turn-on time
ton
95
Fall time
tf
20
Switching time
Turn-off time
toff
Duty
≤ 1%, tw = 10 μs
120
ns
Total gate charge
(gate-source plus gate-drain)
Qg
10
nC
Gate-source charge
Qgs
7.5
nC
Gate-drain (“Miller”) charge
Qgd
2.5
nC
Gate switch charge
Qsw
VDD ≈ 200V, VGS = 10 V,
ID = 1.7 A
3.3
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current (pulse)
(Note 1)
IDRP
6.8
A
Forward voltage (diode)
VDSF
IDR = 1.7 A, VGS = 0 V
−2.0
V
VDD ≈ 125 V
0 V
VGS
10 V
ID = 0.8 A
VOUT


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