BC857BTT1G datasheet(2/6 Pages) ONSEMI

No. de pieza	BC857BTT1G

Descripción Electrónicos	General Purpose Transistor PNP Silicon

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BC857BTT1, BC857CTT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −10 mA)

BC857 Series

V(BR)CEO

−45

−

V

Collector − Emitter Breakdown Voltage

(IC = −10 mA, VEB = 0)

BC857B Only

V(BR)CES

−50

−

V

Collector − Base Breakdown Voltage

(IC = −10 mA)

BC857 Series

V(BR)CBO

−50

−

V

Emitter − Base Breakdown Voltage

(IE = −1.0 mA)

BC857 Series

V(BR)EBO

−5.0

−

V

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (VCB = −30 V, TA = 150°C)

ICBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mA, VCE = −5.0 V)

BC857B

BC857C

(IC = −2.0 mA, VCE = −5.0 V)

BC857B

BC857C

hFE

−

220

420

150

270

290

520

−

475

800

−

Collector − Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VCE(sat)

−

−0.3

−0.65

V

Base − Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VBE(sat)

−

−0.7

−0.9

−

V

Base − Emitter On Voltage

(IC = −2.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

VBE(on)

−0.6

−

−0.75

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz)

Cob

−

4.5

pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

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