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BD249CG Datasheet(PDF) 1 Page - ON Semiconductor |
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BD249CG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: BD249C/D BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 100 Vdc Collector − Base Voltage VCBO 100 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous Peak (Note 1) IC 25 40 Adc Apk Base Current − Continuous IB 5.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 1.0 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 °C Unclamped Inductive Load ESB 90 mJ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Device Package Shipping BD249C TO−218 30 Units/Rail 25 AMP, 100 VOLT, 125 WATT NPN SILICON POWER TRANSISTOR TO−218 CASE 340D STYLE 1 3 2 1 ORDERING INFORMATION AYWWG BD249C BD249C = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM BD249CG TO−218 (Pb−Free) 30 Units/Rail |
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