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CAT24C21LE-T3 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza CAT24C21LE-T3
Descripción Electrónicos  1 kb Dual Mode Serial EEPROM for VESA ?쏱lug-and-Play?
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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CAT24C21LE-T3 Datasheet(HTML) 2 Page - ON Semiconductor

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Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
–55 to +125
°C
Storage Temperature
–65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
–2.0 to +VCC +2.0
V
VCC with Respect to Ground
–2.0 to +7.0
V
Package Power Dissipation Capability (TA = 25°C)
1.0
W
Lead Soldering Temperature (10 secs)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second.
Table 2. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Units
NEND (Notes 3 and 4)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Program/Erase Cycles
TDR (Note 3)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 3)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
Volts
ILTH (Notes 3 and 5)
Latch−up
JEDEC Standard 17
100
mA
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Page Mode, VCC = 5 V, 25°C
5. Latch−up protection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC +1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 2.5 V to 5.5 V, unless otherwise specified. Industrial temperature range.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC
Power Supply Current
fSCL = 400 kHz
2
mA
ISB (Note 6)
Standby Current
VIN = GND or VCC
1
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
−1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
VCC = 3.0 V, IOL = 3 mA
0.4
V
VIL
Input Low Voltage (VCLK)
VCC ≥ 2.7 V
0.8
V
VIH
Input High Voltage (VCLK)
2.0
V
6. Maximum standby current (ISB) = 10 mA for the Extended Automotive temperature range.
Table 4. CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = 5 V)
Symbol
Parameter
Conditions
Min
Max
Units
CI/O (Note 7)
Input/Output Capacitance (SDA)
VI/O = 0 V
8
pF
CIN (Note 7)
Input Capacitance (VCLK, SCL)
VIN = 0 V
6
pF
7. This parameter is tested initially and after a design or process change that affects the parameter.


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