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TD350 Datasheet(PDF) 8 Page - STMicroelectronics

No. de pieza TD350
Descripción Electrónicos  Advanced IGBT/MOSFET driver
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TD350 Datasheet(HTML) 8 Page - STMicroelectronics

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Functional description
TD350
8/17
Doc ID 9525 Rev 6
5
Functional description
5.1
Input
The input is compatible with optocouplers or pulse transformers. The input is triggered by
the signal edge and allows the use of low-sized, low-cost pulse transformer. Input is active
low (output is high when input is low) to ease the use of optocoupler. When driven by a pulse
transformer, the input pulse (positive and negative) width must be larger than the minimum
pulse width tonmin.
5.2
Voltage reference
A voltage reference is used to create accurate timing for the two-level turn-off with external
resistor and capacitor.
5.3
Desaturation protection
Desaturation protection ensures the protection of the IGBT in the event of overcurrent.
When the DESAT voltage goes higher that 7 V, the output is driven low (with 2-level turn-off
if applicable). The FAULT output is activated. The FAULT state is exited at the next falling
edge of IN input.
A programmable blanking time is used to allow enough time for IGBT saturation. Blanking
time is provided by an internal current source and external capacitor.
DESAT input can also be used with an external comparator for overcurrent or over
temperature detection.
5.4
Active Miller clamp
A Miller clamp allows the control of the Miller current during a high dV/dt situation and can
avoid the use of a negative supply voltage.
During turn-off, the gate voltage is monitored and the clamp output is activated when gate
voltage goes below 2 V (relative to GND). The clamp voltage is VL+3 V max for a Miller
current up to 500 mA. The clamp is disabled when the IN input is triggered again.
5.5
Two level turn-off
The two-level turn-off is used to increase the reliability of the application.
During turn-off, gate voltage can be reduced to a programmable level in order to reduce the
IGBT current (in the event of over-current). This action avoids both dangerous overvoltage
across the IGBT, and RBSOA problems, especially at short circuit turn-off.
Turn-off (Ta) delay is programmable through an external resistor and capacitor for accurate
timing.
Turn-off delay (Ta) is also used to delay the input signal to prevent distortion of input pulse
width.


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