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| CM1425 |
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 ONSEMI
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4 page 
CM1425 Rev. 2 | Page 4 of 9 | www.onsemi.com ELECTRICAL OPERATING CHARACTERISTICS 1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 80 100 120 Ω C Capacitance At 2.5V DC, 1MHz, 30mV AC 16 20 24 pF V DIODE Diode Standoff Voltage I DIODE = 10μA 6.0 V I LEAK Diode Leakage Current (reverse bias) V DIODE = + 3.3V 100 300 nA V SIG Signal Voltage Positive Clamp Negative Clamp I LOAD = 10mA I LOAD = -10mA 5.6 -1.5 6.8 -0.8 9.0 -0.4 V V V ESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4- 2 Level 4 Note 2 ±30 ±15 kV kV R DYN Dynamic Resistance Positive Negative 1.5 0.9 Ω Ω f C Cut-off Frequency Z SOURCE=50Ω, ZLOAD=50Ω R = 100 Ω, C = 20pF 86 MHz Note 1: T A=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. |
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