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CSD16340Q3 Datasheet(PDF) 1 Page - Texas Instruments

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No. de pieza CSD16340Q3
Descripción Electrónicos  N-Channel NexFET??Power MOSFETs
Download  9 Pages
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

CSD16340Q3 Datasheet(HTML) 1 Page - Texas Instruments

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1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0095-01
Qg − GateCharge − nC
0
1
4
7
0
2
4
6
8
10
12
G003
3
2
5
6
8
ID =20A
V
=12.5V
DS
VGS − GatetoSourceVoltage − V
0
2
4
6
8
10
12
14
16
0
3
4
7
8
9
10
G006
5
6
1
2
ID =20A
TC =125 C
°
TC =25 C
°
CSD16340Q3
www.ti.com
SLPS247A – DECEMBER 2009 – REVISED JANUARY 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16340Q3
1
FEATURES
PRODUCT SUMMARY
2
Optimized for 5V Gate Drive
VDS
Drain to Source Voltage
25
V
Resistance Rated at VGS = 2.5V
Qg
Gate Charge Total (4.5V)
6.5
nC
Ultra Low Qg and Qgd
Qgd
Gate Charge Gate to Drain
1.2
nC
Low Thermal Resistance
VGS = 2.5V
6.1
m
RDS(on)
Drain to Source On Resistance
VGS = 4.5V
4.3
m
Avalanche Rated
VGS = 8V
3.8
m
Pb Free Terminal Plating
Vth
Threshold Voltage
0.85
V
RoHS Compliant
Halogen Free
SON 3.3mm x 3.3mm Plastic Package
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
SON 3.3 × 3.3
13-inch
Tape and
CSD16340Q3
2500
Plastic Package
reel
Reel
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
ABSOLUTE MAXIMUM RATINGS
Optimized for Control or Synchronous FET
TA = 25°C unless otherwise stated
VALUE
UNIT
Applications
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
+10 / –8
V
DESCRIPTION
Continuous Drain Current, TC = 25°C
60
A
ID
The NexFET™ power MOSFET has been designed
Continuous Drain Current(1)
21
A
to minimize losses in power conversion and optimized
IDM
Pulsed Drain Current, TA = 25°C
(2)
115
A
for 5V gate drive applications.
PD
Power Dissipation(1)
3
W
TJ,
Operating Junction and Storage
Top View
–55 to 150
°C
TSTG
Temperature Range
Avalanche Energy, single pulse
EAS
80
mJ
ID = 40A, L = 0.1mH, RG = 25Ω
(1)
Typical RθJA = 39°C/W on 1in
2 Cu (2 oz.) on 0.060" thick FR4
PCB.
(2)
Pulse width
≤300μs, duty cycle ≤2%
RDS(ON) vs VGS
Gate Charge
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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