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 RECTRON
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RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com SEMICONDUCTOR TECHNICAL SPECIFICATION 1N914B RECTRON 1N914B SIGNAL DIODE Absolute Maximum Ratings (Ta=25 °C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery Time trr 4 ns Power Dissipation 3.33mW/ °C (25°C) P 500 mW Forward Current IF 300 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Mechanical Data Items Materials Package DO-35 Case Hermetically sealed glass Lead/Finish Double stud/Solder Plating Chip Glass Passivated Dimensions (DO-35) DO-35 0.457 0.559 2.0 max. 4.2 max. 26 MIN 26 MIN Dimensions in millimeters DIA. DIA. Electrical Characteristics (Ta=25 °C) Ratings Symbol Ratings Unit Minimum Breakdown Voltage IR= 5.0uA IR= 100uA BV 75 100 V Peak Forward Surge Current PW= 1sec. IFsurge 0.5 A Maximum Forward Voltage IF= 100mA VF 1.0 V Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150 °C IR 0.025 5.0 50 uA Maximum Junction Capacitance VR= 0, f= 1 MHz Cj 4 pF Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Ω trr 4 ns |
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