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TS3A5017DE4 Datasheet(PDF) 11 Page - Texas Instruments |
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TS3A5017DE4 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 30 page TS3A5017 www.ti.com .......................................................................................................................................... SCDS188D – JANUARY 2005 – REVISED DECEMBER 2008 PARAMETER DESCRIPTION SYMBOL DESCRIPTION VD Voltage at D VNC Voltage at S ron Resistance between D and S ports when the channel is ON Δron Difference of ron between channels in a specific device ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions IS(OFF) Leakage current measured at the S port, with the corresponding channel (S to D) in the OFF state ISPWR(OFF) Leakage current measured at the S port under the powered down mode, V+ = 0 IS(ON) Leakage current measured at the S port, with the corresponding channel (S to D) in the ON state and the output (D) open ID(OFF) Leakage current measured at the D port, with the corresponding channel (D to S) in the OFF state IDPWR(OFF) Leakage current measured at the D port under the powered down mode, V+ = 0 ID(ON) Leakage current measured at the D port, with the corresponding channel (D to S) in the ON state and the output (S) open VIH Minimum input voltage for logic high for the control input (IN, EN) VIL Maximum input voltage for logic low for the control input (IN, EN) VI Voltage at the control input (IN, EN) IIH, IIL Leakage current measured at the control input (IN, EN) Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation tON delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning ON. Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation tOFF delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning OFF. Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (S or D) output. QC This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL × ΔVD, CL is the load capacitance and ΔVD is the change in analog output voltage. CS(OFF) Capacitance at the S port when the corresponding channel (S to D) is OFF CS(ON) Capacitance at the S port when the corresponding channel (S to D) is ON CD(OFF) Capacitance at the D port when the corresponding channel (D to S) is OFF CD(ON) Capacitance at the D port when the corresponding channel (D to S) is ON CI Capacitance of control input (IN) OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific OISO frequency, with the corresponding channel (S to D) in the OFF state. Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (1S1 to 2S1). This is XTALK measured in a specific frequency and in dB. BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain. Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root THD mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic. I+ Static power-supply current with the control (IN) pin at V+ or GND Copyright © 2005–2008, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Link(s): TS3A5017 |
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