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| 1N4148 |
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 ROHM
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1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. ! ! ! !Applications High-speed switching ! ! ! !Features 1) Glass sealed envelope. (GSD) 2) High speed. 3) High reliability. ! ! ! !Construction Silicon epitaxial planar ! ! ! !External dimensions (Units : mm) φ 0.5±0.1 C 29 ±1 29 ±1 CATHODE BAND (BLACK) 3.8 ±0.2 A φ 1.8±0.2 Type No. ROHM : GSD EIAJ : − JEDEC : DO-35 ! ! ! !Absolute maximum ratings (Ta = 25 °C) Type 1N4148 100 −65~+200 −65~+200 (V) VRM 75 (V) VR 450 (mA) IFM 150 (mA) IO 200 (mA) IF 2 (A) 1 µs IFSM 500 (mW) P 200 1N4150 50 −65~+200 −65~+200 50 600 200 250 4 500 200 1N4448 100 −65~+200 −65~+200 75 450 150 200 2 500 200 ( °C) Tj ( °C) Topr ( °C) Tstg (1N914B) ! ! ! !Electrical characteristics (Ta = 25 °C) Type 0.1mA 1.0 0.66 0.62 0.74 0.76 0.86 0.82 0.92 1.0 0.87 1.0 0.54 0.62 0.72 @ 0.25mA @ 1mA @ 2mA @ 5mA @ 10mA @ 20mA @ 30mA @ 50mA @ 100mA @ 200mA @ 250mA @ 5 µA 75 100 50.0 20 4 4 0.025 5.0 20 75 − 50 0.1 50 100.0 50 2.5 4 − 100 50.0 20 4 4 @ 100 µA @ @150 °C VR (V) @25 °C VR (V) trr (ns) Cr (pF) IR ( µA) Max. BV (V) Min. VF (V) IF =10mA f =1MHz VR =0 RL =100Ω VR =6V 1N4148 1N4150 1N4448 (IN914B) 0.025 5.0 20 75 The upper figure is the minimum VF and the lower figure is the maximum VF value. |
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