KA2425B datasheet(3/6 Pages) SAMSUNG

No. de pieza	KA2425B

Descripción Electrónicos	SPEECH NETWORK WITH DIALER INTERFACE

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Fabricante Electrónico	SAMSUNG [Samsung semiconductor]

Página de inicio	http://www.samsung.com/Products/Semiconductor

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KA2425A

SPEECH NETWORK WITH DIALER INTERFACE

ECTRICAL CHARACTERISTICS (Continued)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

SYSTEM AMPLIFIERS

TX

Gain

TXO Bias Voltage

TXI input Resistance

GV (TX)

VBIAS (SPM)

VBIAS (TM)

VOL (SPM)

RI (TXI)

TXI to TXO

Speech/Pulse Mode

Tone Mode

Speech/Pulse Mode

24

0.45

VR -25

-

26

0.52

VR -5.0

125

10

28

0.60

-

250

-

dB

xVR

mV

K

Ω

RX

RXO Bias voltage

RXO Source current

RXO High Voltage

RXO Low Voltage

VBIAS (AM)

ISOURCE (SM)

ISOURCE (PTM)

VOH (AM)

VOL (AM)

All Mode

Speech Mode

Pulse/tone Mode

All Mode

0.45

1.5

200

VR -100

-

0.52

2.0

400

VR -50

50

0.60

-

150

xVR

mA

µA

mV

SIDETONE AMPLIFIER

Gain (TXO to STA)

Speech Mode

Pulse Mode

@VLR = 0.5V

@VLR = 2.5V

@VLR = 0.2V

@VLR = 1.0V

-

-15

-21

-15

-21

-

dB

STA Bias Voltage

VBIAS (STA)

All Modes

0.65

0.8

0.9

xVR

MICROPHONE, RECEIVER CONTROLS

MIC Saturation Voltage

VSAT (MIC)

Speech Mode,1 = 500

µA

-

50

125

mV

MIC Leakage Current

ILKG (MIC)

Dialing Mode, Pin 1=3.0V

-

0

5.0

µA

RRMT (SM)

RRMT (DM)

Speech Mode

Dialing Mode

-

5.0

8.0

10

15

18

Ω

K

Ω

RMT Delay

tD (RMT)

Dialing to Speech

2.0

4.0

20

ms

EQUALIZATION AMPLIFIER

GAIN (V + to EQ)

Speech Mode

Pulse Mode

GV (EQ)

@ VLR = 0.5V

@ VLR = 2.5V

@ VLR = 0.2V

@ VLR = 1.0V

-

-12

-2.5

-12

-2.5

-

dB

EQ Bias Voltage

Speech Mode

Pulse Mode

Speech, Pulse Mode

VBIAS (EQ)

@ VLR = 0.5V

@ VLR = 2.5V

-

0.66

1.3

3.3

-

Vdc

GV (STA)

RMT Resistance

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KA2425B Datasheet(PDF) 3 Page - Samsung semiconductor

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