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KM44V4100C Datasheet(PDF) 6 Page - Samsung semiconductor |
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KM44V4100C Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 20 page KM44C4000C, KM44C4100C CMOS DRAM KM44V4000C, KM44V4100C AC CHARACTERISTICS (Continued) Parameter Symbol -5 -6 Units Note Min Max Min Max Data set-up time tDS 0 0 ns 9 Data hold time tDH 10 10 ns 9 Refresh period (2K, Normal) tREF 32 32 ms Refresh period (4K, Normal) tREF 64 64 ms Refresh period (L-ver) tREF 128 128 ms Write command set-up time tWCS 0 0 ns 7 CAS to W delay time tCWD 36 40 ns 7 RAS to W delay time tRWD 73 85 ns 7 Column address to W delay time tAWD 48 55 ns 7 CAS precharge to W delay time tCPWD 53 60 ns CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 ns CAS hold time (CAS -before-RAS refresh) tCHR 10 10 ns RAS to CAS precharge time tRPC 5 5 ns Access time from CAS precharge tCPA 30 35 ns 3 Fast Page cycle time tPC 35 40 ns Fast Page read-modify-write cycle time tPRWC 76 85 ns CAS precharge time (Fast Page cycle) tCP 10 10 ns RAS pulse width (Fast Page cycle) tRASP 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 30 35 ns OE access time tOEA 13 15 ns OE to data delay tOED 13 15 ns Output buffer turn off delay time from OE tOEZ 0 13 0 15 ns 6 OE command hold time tOEH 13 15 ns Write command set-up time (Test mode in) tWTS 10 10 ns 11 Write command hold time (Test mode in) tWTH 10 10 ns 11 W to RAS precharge time(C-B-R refresh) tWRP 10 10 ns W to RAS hold time(C-B-R refresh) tWRH 10 10 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 us 13,14,15 RAS precharge time (C-B-R self refresh) tRPS 90 110 ns 13,14,15 CAS hold time (C-B-R self refresh) tCHS -50 -50 ns 13,14,15 |
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