KM48V2100B datasheet(4/8 Pages) SAMSUNG

No. de pieza	KM48V2100B

Descripción Electrónicos	2M x 8Bit CMOS Dynamic RAM with Fast Page Mode

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Fabricante Electrónico	SAMSUNG [Samsung semiconductor]

Página de inicio	http://www.samsung.com/Products/Semiconductor

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KM48C2000B, KM48C2100B

CMOS DRAM

KM48V2000B, KM48V2100B

*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one fast page mode cycle time,

tPC.

DC AND OPERATING CHARACTERISTICS (Continued)

ICC1* : Operating Current (RAS and CAS cycling @

tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS cycling @

tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @

tPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @

tRC=min.)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,

Din=Don't care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver),

TRAS=TRASmin~300ns

ICCS : Self Refresh Current

RAS=CAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,

DQ0 ~ DQ7=VCC-0.2V, 0.2V or Open

Symbol

Power

Speed

Max

Units

KM48V2000B

KM48V2100B

KM48C2000B

KM48C2100B

ICC1

Don't care

-5

-6

-7

90

80

70

110

100

90

80

70

110

100

90

mA

ICC2

Normal

L

Don't care

1

2

1

2

1

mA

ICC3

Don't care

-5

-6

-7

90

80

70

110

100

90

80

70

110

100

90

mA

ICC4

Don't care

-5

-6

-7

80

70

60

90

80

70

80

70

60

90

80

70

mA

ICC5

Normal

L

Don't care

0.5

0.3

0.5

0.3

1

0.3

1

0.3

mA

uA

ICC6

Don't care

-5

-6

-7

90

80

70

110

100

90

80

70

110

100

90

mA

ICC7

L

Don't care

450

400

450

400

uA

ICCS

L

Don't care

250

300

uA

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KM48V2100B Datasheet(PDF) 4 Page - Samsung semiconductor

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