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2SC4512 Datasheet(PDF) 1 Page - Sanken electric |
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2SC4512 Datasheet(HTML) 1 Page - Sanken electric |
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1 / 1 page 111 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) Application : Audio and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4512 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB 2SC4512 10max 10max 80min 50min 0.5max 20typ 110typ Unit µA µA V V MHz pF Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SC4512 (Ta=25°C) (Ta=25°C) I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) h FE– I C Temperature Characteristics (Typical) θj-a–t Characteristics I C– V BE Temperature Characteristics (Typical) V CE(sat) – I B Characteristics (Typical) Pc – T a Derating Safe Operating Area (Single Pulse) f T– I E Characteristics (Typical) 0 3 2 1 0 0.5 1.0 1.5 Base Current I B(A) I C=6A 2A 4A 0 6 4 2 02 1 Base-Emittor Voltage V BE(V) (V CE=4V) 0.4 1 5 0.5 1 1 0 100 1000 2000 Time t(ms) 50 40 30 20 10 2 0 0 2 5 5 0 7 5 100 125 150 Ambient Temperature Ta(˚C) Without Heatsink 10 3 5 100 50 0.1 0.05 1 0.5 10 20 5 Collector-Emitter Voltage V CE(V) Without Heatsink Natural Cooling DC 10ms 100ms 0.02 0.1 1 5 6 30 50 100 300 Collector Current I C(A) (V CE=4V) Typ 0 0 2 4 6 2 13 4 Collector-Emitter Voltage V CE(V) 80mA 50mA 30mA 20mA 150mA 100mA I B=10mA 200mA (V CE=4V) 0.02 0.5 0.5 6 5 1 20 50 200 100 0.1 Collector Current I C(A) 125˚C 25˚C –30˚C –0.02 –0.1 –1 –6 0 20 10 40 30 (V CE=12V) Emitter Current I E(A) Typ sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL ( Ω) 10 IC (A) 3 VBB2 (V) –5 IB2 (A) –0.3 ton ( µs) 0.16typ tstg ( µs) 2.60typ tf ( µs) 0.34typ IB1 (A) 0.3 VBB1 (V) 10 External Dimensions MT-25(TO220) BE 2.5 2.5 C 1.35 0.65 +0.2 -0.1 10.2±0.2 ø3.75±0.2 4.8±0.2 1.4 2.0±0.1 a b Weight : Approx 2.6g a. Type No. b. Lot No. ∗hFE Rank O(50to100), P(70to140), Y(90to180) |
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