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BC857CLT1G Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza BC857CLT1G
Descripción Electrónicos  General Purpose Transistors PNP Silicon
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BC857CLT1G Datasheet(HTML) 5 Page - ON Semiconductor

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BC856ALT1G Series
http://onsemi.com
5
Figure 13. Thermal Response
t, TIME (ms)
1.0
2.0
5.0
1.0
0.5
0.2
0.1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0k
2.0k
5.0k 10k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
-100
-50
-10
-5.0
-2.0
-5.0
-10
-30 -45 -65
-100
1 s
BC558, BC559
BC557
BC556
The safe operating area curves indicate IC−VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.


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