IRF7702GPBF datasheet(4/9 Pages) IRF

No. de pieza	IRF7702GPBF

Descripción Electrónicos	Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free

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Fabricante Electrónico	IRF [International Rectifier]

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IRF7703GPbF

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1

10

100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs+ Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds+ Cgd

0.1

1

10

100

0.4

0.6

0.8

1.0

1.2

-V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 150 C

J

°

T = 25 C

J

°

0

1

10

100

1000

-VDS , Drain-toSource Voltage (V)

0.1

1

10

100

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

0

30

60

90

120

150

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

I =

D -6.0

V

= 20V

DS

V

= 32V

DS -

-

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IRF7702GPBF Datasheet(PDF) 4 Page - International Rectifier

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