BUK7107-55AIE_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 10 February 2009

4 of 14

NXP Semiconductors

BUK7107-55AIE

N-channel TrenchPLUS standard level FET

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

03na19

40

80

120

(%)

0

03ni63

0

40

80

120

160

0

50

100

150

200

Capped at 75A due to package

Tmb (°C)

ID

(A)

03nf55

1

10

102

103

1

10

102

VDS (V)

ID

(A)

DC

100 ms

10 ms

Limit RDSon = VDS/ID

1 ms

tp = 10 μs

100

μs

Capped at 75 A due to package