2SK2316

Ordering number : EN5300A

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

11697YK (KOTO) TA-0121 No.5300-1/4

Package Dimensions

unit: mm

2062A-PCP

[2SK2316]

SANYO: PCP

(Bottom View)

1 : Gate

2 : Drain

3 : Source

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

20

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

2A

Drain Current (Pulse)

IDP

PW

≤10µd, duty cycle≤1%

8

A

Allowable Power Dissipation

PD

Mounted on ceramic board

1.5

W

(250mm

2

×0.8mm)

Tc=25°C

3.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

D-S Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

20

V

G-S Breakdown Voltage

V(BR)GSS

IG=±100µA, VDS=0

±10

V

Zero-Gate Voltage

IDSS

VDS=16V, VGS=0

100

µA

Drain Current

Gate-to-Source Leakage Current IGSS

VGS=±8V, VDS=0

±10

µA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

0.5

1.5

V

Forward Transfer Admittance

yfs

VDS=10V, ID=1A

1.8

2.8

S

Static Drain-to-Source

RDS(on)

ID=1A, VGS=4V

140

200

m

Ω

ON-State Resistance

RDS(on)

ID=1A, VGS=2.5V

200

320

m

Ω

Input Capacitance

Ciss

VDS=10V, f=1MHz

170

pF

Output Capacitance

Coss

VDS=10V, f=1MHz

145

pF

Reverse Transfer Capacitance

Crss

VDS=10V, f=1MHz

50

pF

Continued on next page.

Features

• Low ON resistance.

• Ultrahigh-speed switching.

• Low-voltage drive (2.5V drive).