STB7N52K3_09 datasheet(3/18 Pages) STMICROELECTRONICS

No. de pieza	STB7N52K3

Descripción Electrónicos	N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3

Electrical ratings

Doc ID 14896 Rev 2

3/18

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 DPAK D²PAK TO-220FP

VDS

Drain-source voltage (VGS = 0)

525

V

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

6.2

6.2 (1)

1.

Limited by package

A

ID

Drain current (continuous) at TC = 100 °C

4.5

4.5 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

24.8

24.8 (1)

A

PTOT

Total dissipation at TC = 25 °C

90

25

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

6.2

A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

100

mJ

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 k

Ω)

2500

V

dv/dt (3)

3.

ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

12

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

-55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 DPAK D²PAK TO-220FP

Rthj-case Thermal resistance junction-case max

1.39

5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

50

30

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

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