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2SK2920 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2920 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2920 2010-02-05 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 200 V, VGS = 0 V — — 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.5 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 2.5 A — 0.56 0.8 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 2.0 4.5 — S Input capacitance Ciss — 440 — Reverse transfer capacitance Crss — 35 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 120 — pF Rise time tr — 15 — Turn-on time ton — 20 — Fall time tf — 15 — Switching time Turn-off time toff — 60 — ns Total gate charge (gate-source plus gate-drain) Qg — 10 — Gate-source charge Qgs — 6 — Gate-drain (“Miller”) charge Qgd VDD ≈ 100 V, VGS = 10 V, ID = 5 A — 4 — nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V — — −2.0 V Reverse recovery time trr — 150 — ns Reverse recovery charge Qrr IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A/μs — 0.45 — μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. K2920 Lot No. Note 4 Part No. (or abbreviation code) |
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