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STB85NF55L Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STB85NF55L
Descripción Electrónicos  N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB85NF55L Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB85NF55L, STP85NF55L
4/14
Doc ID 8544 Rev 8
2
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±15 V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
1
1.6
2.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A
0.0060
0.008
VGS= 5 V, ID= 40 A
0.008
0.01
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 40 A
-
130
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0
-
4050
860
300
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 27.5 V, ID = 80 A
VGS = 5 V
-
80
20
45
110
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 27.5 V, ID= 40 A,
RG=4.7 Ω, VGS= 5 V
Figure 14 on page 8
-
35
165
70
55
-
ns
ns
ns
ns


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