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STP20NK50Z Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STP20NK50Z
Descripción Electrónicos  N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NK50Z Datasheet(HTML) 5 Page - STMicroelectronics

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STx20NK50Z
Electrical characteristics
Doc ID 9118 Rev 9
5/18
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID =1 mA, VGS = 0
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8.5 A
0.23
0.27
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 8.5 A
-
13
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
2600
328
72
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance
VDS =0, VDS = 0 to 640 V
-
187
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 19)
-
28
20
70
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 17 A,
VGS = 10 V
(see
Figure 20)
-
85
15.5
42
119
nC
nC
nC


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