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STP3NK80Z Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza STP3NK80Z
Descripción Electrónicos  N-channel 800 V, 3.8 廓, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STP3NK80Z Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
6/18
Doc ID 9565 Rev 6
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
-
2.5
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
10
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
ISD= 2.5 A, VGS=0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=50 V
(see
Figure 21)
-
384
1600
8.4
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=150 °C
(see
Figure 21)
-
474
2100
8.8
ns
µC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=± 1mA (open drain)
30
-
-
V


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