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STD2NK70Z Datasheet(PDF) 4 Page - STMicroelectronics |
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STD2NK70Z Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical ratings STD2NK70Z - STD2NK70Z-1 4/16 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 4. Gate-source zener diode Symbol Parameter Test Condition Min. Typ. Max Unit BVGSO Gate-source breakdown voltage Igs= ± 1mA (open drain) 30 A |
Número de pieza similar - STD2NK70Z_06 |
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