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STFW3N150 Datasheet(PDF) 1 Page - STMicroelectronics |
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STFW3N150 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 15 page June 2010 Doc ID 13102 Rev 9 1/15 15 STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic package ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF Application Switching applications Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Figure 1. Internal schematic diagram Type VDSS RDS(on) max. ID PTOT STFW3N150 STP3N150 STW3N150 1500 V 1500 V 1500 V < 9 Ω < 9 Ω < 9 Ω 2.5 A 2.5 A 2.5 A 63 W 140 W 140 W TO-220 1 2 3 TO-247 1 2 3 1 2 3 TO-3PF Table 1. Device summary Order codes Marking Package Packaging STFW3N150 3N150 TO-3PF Tube STP3N150 3N150 TO-220 Tube STW3N150 3N150 TO-247 Tube www.st.com |
Número de pieza similar - STFW3N150_10 |
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