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STFW3N150 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STFW3N150
Descripción Electrónicos  N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFW3N150 Datasheet(HTML) 1 Page - STMicroelectronics

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June 2010
Doc ID 13102 Rev 9
1/15
15
STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6
Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic package
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Figure 1.
Internal schematic diagram
Type
VDSS
RDS(on)
max.
ID
PTOT
STFW3N150
STP3N150
STW3N150
1500 V
1500 V
1500 V
< 9
< 9
< 9
2.5 A
2.5 A
2.5 A
63 W
140 W
140 W
TO-220
1
2
3
TO-247
1
2
3
1
2
3
TO-3PF
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STFW3N150
3N150
TO-3PF
Tube
STP3N150
3N150
TO-220
Tube
STW3N150
3N150
TO-247
Tube
www.st.com


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