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STX30NM60ND Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STX30NM60ND
Descripción Electrónicos  N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STX30NM60ND Datasheet(HTML) 3 Page - STMicroelectronics

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STx30NM60ND
Electrical ratings
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/D2PAK
I2PAK / TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
25
25(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
15.8
15.8(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
100
100(1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
dv/dt(3)
3.
ISD ≤ 25 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
--
2500
V
Tstg
Storage temperature
– 55 to 150
°C
TJ
Max. operating junction temperature
150
Table 3.
Thermal data
Symbol
Parameter
TO-220
I²PAK
TO-247 D²PAK TO-220FP Unit
Rthj-case
Thermal resistance
junction-case max
0.66
3.1
°C/W
Rthj-amb
Thermal resistance
junction-ambient max
62.5
50
--
62.5
°C/W
Rthj-pcb
Thermal resistance
junction-pcb max
--
--
--
30
--
°C/W
Tl
Maximum lead temperature
for soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
12
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
900
mJ


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