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STGD18N40LZ-1 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STGD18N40LZ-1
Descripción Electrónicos  EAS 180 mJ - 390 V - internally clamped IGBT
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD18N40LZ-1 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
4/19
Doc ID 14322 Rev 5
2
Electrical characteristics
(TJ=25 °C unless otherwise specified)
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
VCES(clamped)
Collector emitter
clamped voltage
(VGE = 0)
IC = 2 mA
TJ = - 40 °C to 150 °C
360
390
420
V
V(BR)ECS
Emitter collector
break-down voltage
(VGE = 0)
IC = 75 mA
20
28
V
VGE(clamped)
Gate emitter
clamped voltage
IG = ±2 mA
12
16
V
ICES
Collector cut-off
current
(VGE = 0)
VCE = 15 V, TJ = 150 °C
10
µA
VCE = 200 V, TJ = 150 °C
100
µA
IGES
Gate-emitter
leakage current
(VCE = 0)
VGE = ±10 V
450
625
830
µA
RGE
Gate emitter
resistance
12
16
22
k
RG
Gate resistance
1.6
k
VGE(th)
Gate threshold
voltage
VGE =VCE, IC = 1 mA, TJ = -40 °C
1.4
V
VGE =VCE, IC = 1 mA
1.2
1.6
2.3
V
VGE =VCE, IC = 1 mA, TJ =150 °C
0.7
V
VCE(sat)
Collector emitter
saturation voltage
VGE = 4.5 V, IC = 10 A
1.35
1.7
V
VGE = 4.5 V, IC = 10 A,
TJ = 150 °C
1.30
V
VGE = 3.8 V, IC = 6 A
1.30
V
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-490
-
pF
Coes
Output capacitance
-
90
-
pF
Cres
Reverse transfer
capacitance
-5
-
pF
Qg
Gate charge
VCE = 280 V, IC = 10 A,
VGE = 5 V
-29
-
nC


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