BF5020R datasheet(3/11 Pages) INFINEON

No. de pieza	BF5020R

Descripción Electrónicos	Silicon N-Channel MOSFET Tetrode

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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3 / 11 page

2009-10-01

3

BF5020...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics - (verified by random sampling)

Forward transconductance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

gfs

-

34

-

mS

Gate1 input capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

Cg1ss

-

2.4

-

pF

Output capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

Cdss

-

1

-

Power gain

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

Gp

-

26

32

-

dB

Noise figure

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

F

-

1.2

0.8

-

dB

Gain control range

VDS = 5 V, VG2S = 4...0 V

∆Gp

-

45

-

Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ

AGC = 0

AGC = 10 dB

AGC = 40 dB

Xmod

-

98

96

106

-

dBµV

1Input level for k = 1%; fw = 50 MHz, funw = 60 MHz

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